Invention Grant
US07791959B2 Memory integrated circuit device providing improved operation speed at lower temperature
有权
存储器集成电路器件在较低温度下提供更好的操作速度
- Patent Title: Memory integrated circuit device providing improved operation speed at lower temperature
- Patent Title (中): 存储器集成电路器件在较低温度下提供更好的操作速度
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Application No.: US11708321Application Date: 2007-02-21
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Publication No.: US07791959B2Publication Date: 2010-09-07
- Inventor: Ki-Chul Chun
- Applicant: Ki-Chul Chun
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2006-0016685 20060221
- Main IPC: G11C5/14
- IPC: G11C5/14
Abstract:
A memory integrated circuit device may include a first temperature sensing unit, a first voltage adjusting unit, and a MOS back bias voltage outputting unit. The first voltage adjusting unit may be configured to output a voltage based on an output signal of the temperature sensing unit such that the voltage output changes based on changes in a sensed temperature. The MOS back bias voltage outputting unit may be configured to receive the voltage output by the voltage adjusting unit and configured to output the MOS back bias voltage based on the voltage output by the first voltage adjusting unit.
Public/Granted literature
- US20070194381A1 Memory integrated circuit device providing improved operation speed at lower temperature Public/Granted day:2007-08-23
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