Invention Grant
US07791968B2 Determining history state of data in data retaining device based on state of partially depleted silicon-on-insulator
失效
基于部分耗尽的绝缘体上硅的状态确定数据保存装置中数据的历史状态
- Patent Title: Determining history state of data in data retaining device based on state of partially depleted silicon-on-insulator
- Patent Title (中): 基于部分耗尽的绝缘体上硅的状态确定数据保存装置中数据的历史状态
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Application No.: US11924955Application Date: 2007-10-26
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Publication No.: US07791968B2Publication Date: 2010-09-07
- Inventor: Kerry Bernstein , Kenneth J. Goodnow , Clarence R. Ogilvie , Sebastian T. Ventrone , Keith R. Williams
- Applicant: Kerry Bernstein , Kenneth J. Goodnow , Clarence R. Ogilvie , Sebastian T. Ventrone , Keith R. Williams
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Hoffman Warnick LLC
- Agent Michael LeStrange
- Main IPC: G11C29/00
- IPC: G11C29/00
Abstract:
An integrated circuit and a design structure are disclosed. An integrated circuit may comprise: a data retaining device; a partially depleted silicon-on-insulator (PD SOI) device electrically coupled to the data retaining device; and a measurement device coupled to the PD SOI device for measuring a state of the PD SOI device indicating a body voltage thereof, the measuring device being communicatively coupled to a calculating means which determines a history state of a data in the data retaining device based on the measured state of the PD SOI device.
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