Invention Grant
- Patent Title: Semiconductor memory device
- Patent Title (中): 半导体存储器件
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Application No.: US12402151Application Date: 2009-03-11
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Publication No.: US07791979B2Publication Date: 2010-09-07
- Inventor: Noboru Asauchi , Eitaro Otsuka
- Applicant: Noboru Asauchi , Eitaro Otsuka
- Applicant Address: JP Tokyo
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP Tokyo
- Agency: Stroock & Stroock & Lavan LLP
- Priority: JP2005-157181 20050530; JP2005-182808 20050623
- Main IPC: G11C8/00
- IPC: G11C8/00

Abstract:
When the input write data is a value of a value greater than the existing data of the memory array 100, the semiconductor memory device enables writing of input write data to the memory array 100. In specific terms, the increment controller 150 reads the existing data from the memory array 100, and compares it with the write data latched to the 8-bit latch register 170. When the value of the write data is a value greater than the existing data, the increment controller 150 outputs the write enable signal WEN1 to the write/read controller 140, and executes writing of the write data latched to the 8-bit latch register 170 to the memory array 100.
Public/Granted literature
- US20090225609A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2009-09-10
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