Invention Grant
- Patent Title: Silicon waveguide photodetector and related method
- Patent Title (中): 硅波导光电探测器及相关方法
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Application No.: US12110153Application Date: 2008-04-25
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Publication No.: US07792393B2Publication Date: 2010-09-07
- Inventor: Michael J. Hochberg , Tom Baehr-Jones , Axel Scherer
- Applicant: Michael J. Hochberg , Tom Baehr-Jones , Axel Scherer
- Applicant Address: US CA Pasadena
- Assignee: California Institute of Technology
- Current Assignee: California Institute of Technology
- Current Assignee Address: US CA Pasadena
- Agency: Steinfl & Bruno
- Main IPC: G02B6/42
- IPC: G02B6/42

Abstract:
A photodetector device, comprises an optical input, a nanoscale silicon waveguide and an electrical output. The waveguide is a high-contrast waveguide, with a refractive index contrast with the outside environment of more that 10%. The optical mode distribution across the waveguide has a peak intensity in correspondence of surface states of the nanoscale silicon waveguide. A related method is also disclosed.
Public/Granted literature
- US20090052830A1 SILICON WAVEGUIDE PHOTODETECTOR AND RELATED METHOD Public/Granted day:2009-02-26
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