Invention Grant
- Patent Title: Process for the preparation of low contact resistant contact on a high transition temperature superconductors
- Patent Title (中): 在高过渡温度超导体上制备低接触电阻接触的方法
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Application No.: US10594018Application Date: 2004-03-31
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Publication No.: US07792560B2Publication Date: 2010-09-07
- Inventor: Shrikant Ekbote , Gursharan Kaur Padam , Narendra Kumar Arora , Mukul Sharma , Ramesh Sethi , Mrinal Kanti Banerjee
- Applicant: Shrikant Ekbote , Gursharan Kaur Padam , Narendra Kumar Arora , Mukul Sharma , Ramesh Sethi , Mrinal Kanti Banerjee
- Applicant Address: IN New Delhi
- Assignee: Council of Scientific and Industrial Research
- Current Assignee: Council of Scientific and Industrial Research
- Current Assignee Address: IN New Delhi
- Agency: Ladas & Parry LLP
- International Application: PCT/IB2004/001013 WO 20040331
- International Announcement: WO2005/096440 WO 20051013
- Main IPC: H01B12/00
- IPC: H01B12/00 ; H01L39/24 ; H01R4/68 ; B05D5/12

Abstract:
Disclosed is a three layer process for making contact points to a high transition temperature superconductor (HTSC), particularly to (Bi,Pb)2Sr2Ca2Cu3O19+x with and without silver in the superconductor. The contact structure is a three layer configuration with a perforated silver foil (3) sandwiched between two metal spray gun deposited silver layers (2,5) and subsequent heat treatment in air. The contact has been made on tubes and rods (1). The silver contacts are capable of carrying a continuous current of 200 Amps without adding any substantial heat load to the cryogen used to cool the HTSC. The contact resistance at 4.2 K is in the range of 1.5×10 (hoch−8) to 8.5″ 10 (hoch−8)OHM in zero applied filed.
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