Invention Grant
- Patent Title: Mother/daughter switch design with self power-up control
- Patent Title (中): 母/子开关设计具有自上电控制功能
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Application No.: US11789721Application Date: 2007-04-24
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Publication No.: US07793130B2Publication Date: 2010-09-07
- Inventor: Shih-Hsien Yang , Chung-Hsing Wang , Lee-Chung Lu , Chun-Hui Tai , Cliff Hou
- Applicant: Shih-Hsien Yang , Chung-Hsing Wang , Lee-Chung Lu , Chun-Hui Tai , Cliff Hou
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: G06F1/26
- IPC: G06F1/26

Abstract:
System and method for providing power to integrated circuitry with good power-on responsive time and reduced power-on transient glitches. A preferred embodiment comprises a daughter switch coupled to a circuit block, a first control circuit coupled to the daughter circuit, a second control circuit coupled to the first control circuit, and a mother circuit coupled to the circuit block and to the second control circuit. After the daughter switch is turned on by a control signal, the mother switch is not turned on until the daughter switch has discharged (charged) the voltage potential across power rails of the mother circuit to a point where glitches are minimized. The second control circuit turns on the mother circuit when the reduced voltage potential is reached, with a signal produced by the first control circuit reflects the voltage potential. Furthermore, a bypass circuit can be used to reduce leakage current.
Public/Granted literature
- US20080270813A1 Mother/daughter switch design with self power-up control Public/Granted day:2008-10-30
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