Invention Grant
- Patent Title: Semiconductor device, manufacturing method and apparatus for the same
- Patent Title (中): 半导体装置及其制造方法及装置
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Application No.: US12565322Application Date: 2009-09-23
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Publication No.: US07793818B2Publication Date: 2010-09-14
- Inventor: Masamoto Tago , Tomohiro Nishiyama , Tetuya Tao , Kaoru Mikagi
- Applicant: Masamoto Tago , Tomohiro Nishiyama , Tetuya Tao , Kaoru Mikagi
- Applicant Address: JP Tokyo
- Assignee: NEC Corporation
- Current Assignee: NEC Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2001-005977 20010115; JP2001-170787 20010606
- Main IPC: B23K31/02
- IPC: B23K31/02 ; H01L21/44

Abstract:
A highly reliable semiconductor chip electrode structure allowing control of interface reaction of bonding sections even in the case of using two- or three-element solder used conventionally is disclosed. A solder alloy making layer for preventing dissolving and diffusion of tin into tin-based lead free solder is thinly formed on a UBM layer. The tin-based solder is supplied in solder paste or solder ball form. A combined solder alloy layer composed of a combination of intermetallic compounds, one of tin and the solder alloy making layer, and one of tin and the UBM layer, is formed by heating and melting.
Public/Granted literature
- US20100015796A1 SEMICONDUCTOR DEVICE, MANUFACTURING METHOD AND APPARATUS FOR THE SAME Public/Granted day:2010-01-21
Information query
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