Invention Grant
- Patent Title: Substrate processing method, substrate processing apparatus, and manufacturing method of semiconductor device
- Patent Title (中): 基板处理方法，基板处理装置以及半导体装置的制造方法
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Application No.: US11654565Application Date: 2007-01-18
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Publication No.: US07794923B2Publication Date: 2010-09-14
- Inventor: Eishi Shiobara , Kentaro Matsunaga , Daisuke Kawamura , Tomoyuki Takeishi , Kei Hayasaki , Shinichi Ito
- Applicant: Eishi Shiobara , Kentaro Matsunaga , Daisuke Kawamura , Tomoyuki Takeishi , Kei Hayasaki , Shinichi Ito
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2006-013061 20060120
- Main IPC: G03F7/00
- IPC: G03F7/00
Abstract:
A substrate processing method including while a liquid is supplied between a processing target substrate to be applied with exposure treatment and a projection optical system of an exposure apparatus for carrying out the exposure treatment, prior to providing a resist film on a first main face of the processing target substrate that is provided for liquid immersion exposure for carrying out the exposure treatment at a side to be applied with the exposure treatment, selectively applying at least hydrophobic treatment with respect to a region in a predetermined range from a peripheral rim part of a second main face opposite to the first main face.
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