Invention Grant
US07795068B2 Method of making integrated circuit (IC) including at least one storage cell
有权
制造包括至少一个存储单元的集成电路（IC）的方法
- Patent Title: Method of making integrated circuit (IC) including at least one storage cell
- Patent Title (中): 制造包括至少一个存储单元的集成电路（IC）的方法
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Application No.: US12136158Application Date: 2008-06-10
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Publication No.: US07795068B2Publication Date: 2010-09-14
- Inventor: David V. Horak , Chung H. Lam , Hon-Sum P. Wong
- Applicant: David V. Horak , Chung H. Lam , Hon-Sum P. Wong
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Law Office of Charles W. Peterson, Jr.
- Agent Wan Yee Cheung, Esq.; Vazken Alexanian
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/06
Abstract:
A storage cell, integrated circuit (IC) chip with one or more storage cells that may be in an array of the storage cells and a method of forming the storage cell and IC. Each storage cell includes a stylus, the tip of which is phase change material. The phase change tip may be sandwiched between an electrode and conductive material, e.g., titanium nitride (TiN), tantalum nitride (TaN) or n-type semiconductor. The phase change layer may be a chalcogenide and in particular a germanium (Ge), antimony (Sb), tellurium (Te) (GST) layer.
Public/Granted literature
- US20080248624A1 METHOD OF MAKING INTEGRATED CIRCUIT (IC) INCLUDING AT LEAST ONE STORAGE CELL Public/Granted day:2008-10-09
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