Invention Grant
- Patent Title: Semiconductor device and fabricating method thereof
- Patent Title (中): 半导体器件及其制造方法
-
Application No.: US12576714Application Date: 2009-10-09
-
Publication No.: US07795084B2Publication Date: 2010-09-14
- Inventor: Jin Hyo Jung
- Applicant: Jin Hyo Jung
- Applicant Address: KR Seoul
- Assignee: Dongbu Electronics Co., Ltd.
- Current Assignee: Dongbu Electronics Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Saliwanchik, Lloyd & Saliwanchik
- Priority: KR10-2003-0101101 20031231
- Main IPC: H01L21/336
- IPC: H01L21/336

Abstract:
Semiconductor devices and a fabricating method therefore are disclosed. One method includes forming a buffer oxide layer and a buffer nitride layer on the top surface of a semiconductor substrate; forming a photoresist pattern on the pad nitride layer and forming a trench by etching the buffer nitride layer, the buffer oxide layer and the semiconductor substrate by a predetermined etch using the photoresist pattern as a mask; forming sidewall floating gates on the lateral faces of the trench; depositing polysilicon on the entire surface of the resulting structure; forming a gate electrode by patterning the polysilicon of the resulting structure; removing the buffer nitride layer and forming a poly oxide layer on the exposed part of the polysilicon of the gate electrode; forming source/drain regions by implanting impurities into the predetermined part of the resulting structure; injecting electric charges into the sidewall floating gates; and forming spacers on the lateral faces of the sidewall floating gates and the gate electrode.
Public/Granted literature
- US20100029051A1 Semiconductor Device and Fabricating Method Thereof Public/Granted day:2010-02-04
Information query
IPC分类: