Invention Grant
US07795089B2 Forming a semiconductor device having epitaxially grown source and drain regions
有权
形成具有外延生长的源区和漏区的半导体器件
- Patent Title: Forming a semiconductor device having epitaxially grown source and drain regions
- Patent Title (中): 形成具有外延生长的源区和漏区的半导体器件
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Application No.: US11680219Application Date: 2007-02-28
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Publication No.: US07795089B2Publication Date: 2010-09-14
- Inventor: Laegu Kang , Vishal P. Trivedi , Da Zhang
- Applicant: Laegu Kang , Vishal P. Trivedi , Da Zhang
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agent Kim-Marie Vo; James L. Clingan, Jr.
- Main IPC: H01L21/8238
- IPC: H01L21/8238
Abstract:
A semiconductor device structure is made on a semiconductor substrate having a semiconductor layer having isolation regions. A first gate structure is formed over a first region of the semiconductor layer, and a second gate structure is over a second region of the semiconductor layer. A first insulating layer is formed over the first and second regions. The first insulating layer can function as a mask during an etch of the semiconductor layer and can be removed selective to the isolation regions and the sidewall spacers. The first insulating layer is removed from over the first region to leave a remaining portion of the first insulating layer over the second region. The semiconductor layer is recessed in the first region adjacent to the first gate to form recesses. A semiconductor material is epitaxially grown in the recesses. The remaining portion of the first insulating layer is removed.
Public/Granted literature
- US20080206940A1 FORMING A SEMICONDUCTOR DEVICE HAVING EPITAXIALLY GROWN SOURCE AND DRAIN REGIONS Public/Granted day:2008-08-28
Information query
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