Invention Grant
US07795106B2 Semiconductor device formed on (111) surface of a Si crystal and fabrication process thereof
有权
在Si晶体的（111）表面上形成的半导体器件及其制造方法
- Patent Title: Semiconductor device formed on (111) surface of a Si crystal and fabrication process thereof
- Patent Title (中): 在Si晶体的（111）表面上形成的半导体器件及其制造方法
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Application No.: US11907348Application Date: 2007-10-11
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Publication No.: US07795106B2Publication Date: 2010-09-14
- Inventor: Tadahiro Ohmi , Shigetoshi Sugawa , Katsuyuki Sekine , Yuji Saito
- Applicant: Tadahiro Ohmi , Shigetoshi Sugawa , Katsuyuki Sekine , Yuji Saito
- Applicant Address: JP Miyagi JP Tokyo
- Assignee: Tadahiro Ohmi,Tokyo Electron Limited
- Current Assignee: Tadahiro Ohmi,Tokyo Electron Limited
- Current Assignee Address: JP Miyagi JP Tokyo
- Agency: Pillsbury Winthrop Shaw Pittman, LLP
- Main IPC: H01L21/76
- IPC: H01L21/76
Abstract:
A semiconductor device includes a Si crystal having a crystal surface in the vicinity of a (111) surface, and an insulation film formed on said crystal surface, at least a part of said insulation film comprising a Si oxide film containing Kr or a Si nitride film containing Ar or Kr.
Public/Granted literature
- US20080224145A1 Semiconductor device formed on (111) surface of a Si crystal and fabrication process thereof Public/Granted day:2008-09-18
Information query
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