Invention Grant
- Patent Title: Method for manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US12010937Application Date: 2008-01-31
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Publication No.: US07795121B2Publication Date: 2010-09-14
- Inventor: Tsunehiro Ino , Akio Kaneko , Nobutoshi Aoki
- Applicant: Tsunehiro Ino , Akio Kaneko , Nobutoshi Aoki
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2005-208915 20050719
- Main IPC: H01L21/265
- IPC: H01L21/265
Abstract:
A method for manufacturing a semiconductor device is provided, which includes forming a gate insulating film on a semiconductor substrate, forming a first layer on the gate insulating film, the first layer containing a first p-type impurity and, an amorphous or polycrystalline formed of Si1-xGex (0≦x
Public/Granted literature
- US20080146013A1 Method for manufacturing semiconductor device Public/Granted day:2008-06-19
Information query
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