A semiconductor device of the invention includes an integrated circuit formed on a semiconductor substrate having first and second surfaces and a notch region along the edges. The first surface includes electrical contact pads electrically connected with the integrated circuit. The first surface of the semiconductor substrate includes a top protective layer that has a surface portion extending beyond the edges of the semiconductor substrate. The second surface of the semiconductor substrate includes a bottom protective layer with electrical connectors. The surface portion of the top protective layer includes electrical contact pads that are electrically interconnected with electrical contact pad extensions. The electrical contact pad extensions are interconnected with electrical connectors via a backside electrical connector that overlaps the electrical contact pad extensions forming a lap connection. Methods for constructing such devices and connections are also disclosed.