Metal wiring of semiconductor device and forming method thereof

Invention Grant

US07795136B2 Metal wiring of semiconductor device and forming method thereof 有权

Title translation: 半导体器件的金属布线及其形成方法

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Patent Title: Metal wiring of semiconductor device and forming method thereof
Patent Title (中): 半导体器件的金属布线及其形成方法
Application No.: US11863373

Application Date: 2007-09-28
Publication No.: US07795136B2

Publication Date: 2010-09-14
Inventor: Kyung Min Park
Applicant: Kyung Min Park
Applicant Address: KR Seoul
Assignee: Dongbu Hitek Co., Ltd.
Current Assignee: Dongbu Hitek Co., Ltd.
Current Assignee Address: KR Seoul
Agency: Saliwanchik, Lloyd & Saliwanchik
Priority: KR10-2006-0125292 20061211
Main IPC: H01L21/4763
IPC: H01L21/4763

Metal wiring of semiconductor device and forming method thereof

Abstract:

A metal wiring of a semiconductor device and a forming method thereof are provided. A dielectric layer is formed on a semiconductor substrate including a lower metal wiring. A SOG (spin on glass) coating layer is formed on the dielectric layer to inhibit material from another layer from infiltrating into the dielectric layer.

Abstract(Chinese):

提供半导体器件的金属布线及其形成方法。在包括下金属布线的半导体基板上形成介电层。在电介质层上形成SOG（旋涂玻璃）涂层，以防止另一层的材料渗入介电层。

Public/Granted literature

US20080136042A1 Metal Wiring of Semiconductor Device and Forming Method Thereof Public/Granted day:2008-06-12

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）