Invention Grant
US07795150B2 Metal capping of damascene structures to improve reliability using hyper selective chemical-mechanical deposition
失效
使用超选择性化学机械沉积来改善镶嵌结构的金属封盖以提高可靠性
- Patent Title: Metal capping of damascene structures to improve reliability using hyper selective chemical-mechanical deposition
- Patent Title (中): 使用超选择性化学机械沉积来改善镶嵌结构的金属封盖以提高可靠性
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Application No.: US10998467Application Date: 2004-11-29
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Publication No.: US07795150B2Publication Date: 2010-09-14
- Inventor: Elvis M. Chan , Bradley S. Withers
- Applicant: Elvis M. Chan , Bradley S. Withers
- Applicant Address: US CA Santa Clara
- Assignee: Renesas Electronics America Inc.
- Current Assignee: Renesas Electronics America Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Campbell Stephenson LLP
- Main IPC: H01L21/3205
- IPC: H01L21/3205 ; H01L21/304
Abstract:
A method for improving the reliability of integrated circuits. In one embodiment, the method includes forming a dielectric layer on a semiconductor wafer. A trench is then formed in the dielectric. Thereafter, a conductive interconnect is formed within the trench, wherein the conductive interconnect comprises copper. The conductive interconnect is then etched using an acidic solution. Lastly, a conductive layer is formed on an exposed surface of the etched conductive interconnect.
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