Producing method of semiconductor device

Invention Grant

US07795156B2 Producing method of semiconductor device 有权

Title translation: 半导体器件的生产方法

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Patent Title: Producing method of semiconductor device
Patent Title (中): 半导体器件的生产方法
Application No.: US11664287

Application Date: 2005-10-31
Publication No.: US07795156B2

Publication Date: 2010-09-14
Inventor: Tadashi Terasaki , Akito Hirano , Masanori Nakayama , Unryu Ogawa
Applicant: Tadashi Terasaki , Akito Hirano , Masanori Nakayama , Unryu Ogawa
Applicant Address: JP Tokyo
Assignee: Hitachi Kokusai Electric Inc.
Current Assignee: Hitachi Kokusai Electric Inc.
Current Assignee Address: JP Tokyo
Agency: Birch, Stewart, Kolasch & Birch, LLP
Priority: JP2004-321439 20041105; JP2005-137308 20050510
International Application: PCT/JP2005/020013 WO 20051031
International Announcement: WO2006/049130 WO 20060511
Main IPC: H01L21/469
IPC: H01L21/469

Producing method of semiconductor device

Abstract:

Disclosed is a producing method of a semiconductor device comprising a step of forming a tunnel insulating film of a flash device comprising a first nitridation step of forming a first silicon oxynitride film by nitriding a silicon oxide film formed on a semiconductor silicon base by one of plasma nitridation and thermal nitridation, the plasma nitridation carrying out nitridation process by using a gas activated by plasma discharging a first gas including a first compound which has at least a nitrogen atom in a chemical formula thereof, and the thermal nitridation carrying out nitridation process using heat by using a second gas including a second compound which has at least a nitrogen atom in a chemical formula thereof, and a second nitridation step of forming a second silicon oxynitride film by nitriding the first silicon oxynitride film by the other of the plasma nitridation and the thermal nitridation.

Abstract(Chinese):

公开了一种半导体器件的制造方法，包括形成闪光器件的隧道绝缘膜的步骤，该闪光器件包括通过用等离子体等离子体中的一种氮化氮化形成第一氧氮化硅膜的第一氮化步骤来形成半导体硅基底上的氧化硅膜氮化和热氮化，等离子体氮化通过使用通过等离子体激活的气体进行氮化处理，该气体包括具有其化学式中具有至少氮原子的第一化合物的第一气体，并且使用热进行氮化处理通过使用包含其化学式中具有至少一个氮原子的第二化合物的第二气体和通过另一个等离子体氮化氮化氮化硅膜来形成第二氧氮化硅膜的第二氮化步骤，热氮化。

Public/Granted literature

US20070298622A1 Producing Method of Semiconductor Device Public/Granted day:2007-12-27

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/469	......在半导体材料上形成绝缘层的，例如，用于掩膜的或应用光刻技术的（密封层入H01L21/56）以及这些层的后处理