Invention Grant
- Patent Title: Oxidation method and apparatus for semiconductor process
- Patent Title (中): 半导体工艺的氧化方法和装置
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Application No.: US11892949Application Date: 2007-08-28
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Publication No.: US07795158B2Publication Date: 2010-09-14
- Inventor: Takehiko Fujita , Jun Ogawa , Shigeru Nakajima , Kazuhide Hasebe
- Applicant: Takehiko Fujita , Jun Ogawa , Shigeru Nakajima , Kazuhide Hasebe
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Smith, Gambrell & Russell, LLP
- Priority: JP2006-237559 20060901
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469
Abstract:
In an oxidation method for a semiconductor process, target substrates are placed at intervals in a vertical direction within a process field of a process container. An oxidizing gas and a deoxidizing gas are supplied to the process field from one side of the process field while gas is exhausted from the other side. One or both of the oxidizing gas and the deoxidizing gas are activated. The oxidizing gas and the deoxidizing gas are caused to react with each other, thereby generating oxygen radicals and hydroxyl group radicals within the process field. An oxidation process is performed on the surfaces of the target substrate by use of the oxygen radicals and the hydroxyl group radicals.
Public/Granted literature
- US20080057199A1 Oxidation method and apparatus for semiconductor process Public/Granted day:2008-03-06
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