Invention Grant
- Patent Title: Transistor structure and dynamic random access memory structure including the same
- Patent Title (中): 晶体管结构与动态随机存取存储器结构相同
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Application No.: US12338988Application Date: 2008-12-18
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Publication No.: US07795620B2Publication Date: 2010-09-14
- Inventor: Wen-Kuei Huang
- Applicant: Wen-Kuei Huang
- Applicant Address: TW Kueishan, Tao-Yuan Hsien
- Assignee: Nanya Technology Corp.
- Current Assignee: Nanya Technology Corp.
- Current Assignee Address: TW Kueishan, Tao-Yuan Hsien
- Agent Winston Hsu
- Priority: TW97132675A 20080827
- Main IPC: H01L27/108
- IPC: H01L27/108

Abstract:
A dynamic random access memory structure is disclosed, in which, the active area is a donut-type pillar at which a novel vertical transistor is disposed and has a gate filled in the central cavity of the pillar and upper and lower sources/drains located in the upper and the lower portions of the pillar respectively. A buried bit line is formed in the substrate beneath the transistor. A word line is horizontally disposed above the gate. A capacitor is disposed above the word line as well as the gate and electrically connected to the upper source/drain through a node contact. The node contact has a reverse-trench shape with the top surface electrically connected to the capacitor and with the bottom of the sidewalls electrically connected to the upper source/drain. The word line passes through the space confined by the reverse-trench shape.
Public/Granted literature
- US20100052029A1 TRANSISTOR STRUCTURE AND DYNAMIC RANDOM ACCESS MEMORY STRUCTURE INCLUDING THE SAME Public/Granted day:2010-03-04
Information query
IPC分类: