Invention Grant
US07795620B2 Transistor structure and dynamic random access memory structure including the same 有权
晶体管结构与动态随机存取存储器结构相同

  • Patent Title: Transistor structure and dynamic random access memory structure including the same
  • Patent Title (中): 晶体管结构与动态随机存取存储器结构相同
  • Application No.: US12338988
    Application Date: 2008-12-18
  • Publication No.: US07795620B2
    Publication Date: 2010-09-14
  • Inventor: Wen-Kuei Huang
  • Applicant: Wen-Kuei Huang
  • Applicant Address: TW Kueishan, Tao-Yuan Hsien
  • Assignee: Nanya Technology Corp.
  • Current Assignee: Nanya Technology Corp.
  • Current Assignee Address: TW Kueishan, Tao-Yuan Hsien
  • Agent Winston Hsu
  • Priority: TW97132675A 20080827
  • Main IPC: H01L27/108
  • IPC: H01L27/108
Transistor structure and dynamic random access memory structure including the same
Abstract:
A dynamic random access memory structure is disclosed, in which, the active area is a donut-type pillar at which a novel vertical transistor is disposed and has a gate filled in the central cavity of the pillar and upper and lower sources/drains located in the upper and the lower portions of the pillar respectively. A buried bit line is formed in the substrate beneath the transistor. A word line is horizontally disposed above the gate. A capacitor is disposed above the word line as well as the gate and electrically connected to the upper source/drain through a node contact. The node contact has a reverse-trench shape with the top surface electrically connected to the capacitor and with the bottom of the sidewalls electrically connected to the upper source/drain. The word line passes through the space confined by the reverse-trench shape.
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