Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12076987Application Date: 2008-03-26
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Publication No.: US07795627B2Publication Date: 2010-09-14
- Inventor: Shunpei Yamazaki
- Applicant: Shunpei Yamazaki
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2007-133500 20070518
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
A plurality of rectangle semiconductor substrates are attached to a single mother glass substrate. A pixel structure is determined so that even if a gap or a an overlapping portion is generated in a boundary between a plurality of semiconductor substrates, a single-crystal semiconductor layer does not overlap with the gap or the overlapping portion. Two TFTs are located in a first unit cell including the first light emitting element, four TFTs are located in a second unit cell including the second light emitting element, and no TFT is located in a third unit cell including the third light emitting element. A boundary line is between the third unit cell and a fourth unit cell.
Public/Granted literature
- US20080283848A1 Semiconductor device and method for manufacturing the same Public/Granted day:2008-11-20
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