Invention Grant
- Patent Title: Semiconductor device with oxidized regions and method for fabricating the same
- Patent Title (中): 具有氧化区域的半导体器件及其制造方法
-
Application No.: US10912142Application Date: 2004-08-06
-
Publication No.: US07795630B2Publication Date: 2010-09-14
- Inventor: Hisashi Nakayama , Tetsuzo Ueda , Masaaki Yuri , Toshiyuki Takizawa
- Applicant: Hisashi Nakayama , Tetsuzo Ueda , Masaaki Yuri , Toshiyuki Takizawa
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: Greenblum & Bernstein, P.L.C.
- Priority: JP2003-288750 20030807
- Main IPC: H01L33/00
- IPC: H01L33/00
Abstract:
A semiconductor device, which includes an active layer made of a first semiconductor layer formed on a substrate, is designed so that a first oxidized area made of an oxide layer is formed on the active layer. The first oxidized area further aids in reducing a reactive current so that it becomes possible to achieve a semiconductor device having superior device characteristics.
Public/Granted literature
- US20050029531A1 Semiconductor device and method for fabricating the same Public/Granted day:2005-02-10
Information query
IPC分类:
