A semiconductor memory device includes a supporting substrate including semiconductor materials. The memory device also includes an insulation film provided above the supporting substrate. The memory device further includes a first diffusion layer provided on the insulation film. In addition, the memory device includes a second diffusion layer provided on the insulation film. The memory device additionally includes a body region provided between the first diffusion layer and the second diffusion layer. The body region is in an electrically floating state and accumulates or releases electric charges for storing data. Also, the memory device includes a semiconductor layer penetrating the insulation film and electrically connecting the second diffusion layer to the supporting substrate to release electric charges from the second diffusion layer. Further, the memory device includes a gate insulation film provided on the body region. Additionally, the memory device includes a gate electrode provided on the gate insulation film.