Capacitor structure in trench structures of semiconductor devices and semiconductor devices comprising capacitor structures of this type and methods for fabricating the same

Invention Grant

US07795660B2 Capacitor structure in trench structures of semiconductor devices and semiconductor devices comprising capacitor structures of this type and methods for fabricating the same 有权

Title translation: 包括这种类型的电容器结构的半导体器件和半导体器件的沟槽结构中的电容器结构及其制造方法

Please log in to see more content

Patent Title: Capacitor structure in trench structures of semiconductor devices and semiconductor devices comprising capacitor structures of this type and methods for fabricating the same
Patent Title (中): 包括这种类型的电容器结构的半导体器件和半导体器件的沟槽结构中的电容器结构及其制造方法
Application No.: US11223210

Application Date: 2005-09-12
Publication No.: US07795660B2

Publication Date: 2010-09-14
Inventor: Anton Mauder , Hans-Joachim Schulze , Helmut Strack
Applicant: Anton Mauder , Hans-Joachim Schulze , Helmut Strack
Applicant Address: DE Neubiberg
Assignee: Infineon Technologies AG
Current Assignee: Infineon Technologies AG
Current Assignee Address: DE Neubiberg
Agency: Edell, Shapiro & Finnan, LLC
Priority: DE102004044619 20040913
Main IPC: H01L29/94
IPC: H01L29/94

Capacitor structure in trench structures of semiconductor devices and semiconductor devices comprising capacitor structures of this type and methods for fabricating the same

Abstract:

A capacitor structure includes: a number of conductive regions of metallic and/or semiconducting materials and/or conductive metal compounds thereof, the conductive regions being arranged as stacked layers in a trench structure of a semiconductor device; and a dielectric surrounding the conductive regions.

Abstract(Chinese):

电容器结构包括：多个金属和/或半导体材料的导电区域和/或其导电金属化合物，所述导电区域被布置为半导体器件的沟槽结构中的堆叠层; 以及围绕导电区域的电介质。

Public/Granted literature

US20060054959A1 Capacitor structure in trench structures of semiconductor devices and semiconductor devices comprising capacitor structures of this type and methods for fabricating the same Public/Granted day:2006-03-16

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/86	..只能通过对一个或多个通有待整流，放大、振荡或切换的电流的电极供给电流的变化或施加电位的变化方可进行控制的（H01L29/96优先）
H01L29/92	...有电位跃变势垒或表面势垒的电容器
H01L29/94	....金属—绝缘体—半导体，例如MOS