Invention Grant
US07795663B2 Acceptor doped barium titanate based thin film capacitors on metal foils and methods of making thereof
有权
金属箔上的掺杂了钛酸钡的薄膜电容器的接受体及其制造方法
- Patent Title: Acceptor doped barium titanate based thin film capacitors on metal foils and methods of making thereof
- Patent Title (中): 金属箔上的掺杂了钛酸钡的薄膜电容器的接受体及其制造方法
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Application No.: US11157894Application Date: 2005-06-21
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Publication No.: US07795663B2Publication Date: 2010-09-14
- Inventor: Seigi Suh , William J. Borland
- Applicant: Seigi Suh , William J. Borland
- Applicant Address: US DE Wilmington
- Assignee: E. I. du Pont de Nemours and Company
- Current Assignee: E. I. du Pont de Nemours and Company
- Current Assignee Address: US DE Wilmington
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L29/94

Abstract:
The present invention is directed to a dielectric thin film composition comprising: (1) one or more barium/titanium-containing additives selected from (a) barium titanate, (b) any composition that can form barium titanate during firing, and (c) mixtures thereof; dissolved in (2) organic medium; and wherein said thin film composition is doped with 0.002-0.05 atom percent of a dopant comprising an element selected from Sc, Cr, Fe, Co, Ni, Ca, Zn, Al, Ga, Y, Nd, Sm, Eu, Gd, Dy, Ho, Er, Yb, Lu and mixtures thereof and to capacitors comprising such compositions.
Public/Granted literature
- US20060284233A1 Acceptor doped barium titanate based thin film capacitors on metal foils and methods of making thereof Public/Granted day:2006-12-21
Information query
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