Invention Grant
- Patent Title: Semiconductor device and method of manufacturing semiconductor device
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US11422975Application Date: 2006-06-08
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Publication No.: US07795688B2Publication Date: 2010-09-14
- Inventor: Yoshihiko Nagahama
- Applicant: Yoshihiko Nagahama
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sonnenschein Nath & Rosenthal LLP
- Priority: JPP2005-172031 20050613
- Main IPC: H01L29/43
- IPC: H01L29/43
Abstract:
A semiconductor device including, on a substrate, a first conduction type MOS transistor having a gate electrode provided in a first trench formed in an insulation film on the substrate, and a second conduction type MOS transistor having a gate electrode provided in a second trench formed in the insulation film, the first conduction type and the second conduction type being opposite types.
Public/Granted literature
- US20060278934A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2006-12-14
Information query
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