Invention Grant
- Patent Title: Resonator and fabrication method thereof
- Patent Title (中): 谐振器及其制造方法
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Application No.: US11657587Application Date: 2007-01-25
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Publication No.: US07795692B2Publication Date: 2010-09-14
- Inventor: Joo-ho Lee , Hae-seok Park , Sang-hun Lee , Duck-hwan Kim , Sang-chul Sul
- Applicant: Joo-ho Lee , Hae-seok Park , Sang-hun Lee , Duck-hwan Kim , Sang-chul Sul
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2006-0077224 20060816
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L31/00

Abstract:
A resonator including a substrate, and a resonating unit having an active region that causes resonances and a non-active region that does not cause resonances, and having a first electrode, a piezoelectric film, and a second electrode layered in turn on the substrate. At least one of the first and the second electrodes is formed, so that at least a portion of a non-active region portion thereof has a thickness different from that of an active region portion thereof.
Public/Granted literature
- US20080042780A1 Resonator and fabrication method thereof Public/Granted day:2008-02-21
Information query
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