Invention Grant
- Patent Title: Ceramic wiring board and process for producing the same, and semiconductor device using the same
- Patent Title (中): 陶瓷接线板及其制造方法以及使用其的半导体器件
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Application No.: US11815722Application Date: 2006-01-30
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Publication No.: US07795732B2Publication Date: 2010-09-14
- Inventor: Miho Nakamura , Yoshiyuki Fukuda
- Applicant: Miho Nakamura , Yoshiyuki Fukuda
- Applicant Address: JP Tokyo JP Yokohama-shi
- Assignee: Kabushiki Kaisha Toshiba,Toshiba Materials Co., Ltd.
- Current Assignee: Kabushiki Kaisha Toshiba,Toshiba Materials Co., Ltd.
- Current Assignee Address: JP Tokyo JP Yokohama-shi
- Agency: Foley & Lardner LLP
- Priority: JP2005-030092 20050207
- International Application: PCT/JP2006/301415 WO 20060130
- International Announcement: WO2006/082770 WO 20060810
- Main IPC: H01L23/04
- IPC: H01L23/04 ; H01L23/48

Abstract:
A ceramic wiring board 10 includes a ceramic substrate 11 and a wiring layer 12 formed on the ceramic substrate 11. The wiring layer 12 includes a wiring part 13 and a connection part 14, the wiring part 13 having a base metal layer 15, a first diffusion preventive layer 16 and a first Au layer 17 which are stacked in sequence on a surface of the ceramic substrate 11, and the connection part 14 having a second diffusion preventive layer 19, a void suppression layer 20 and a solder layer 18 which are stacked in sequence at a desired position on the wiring part 13. The void suppression layer 20 is made of, for example, Au or an Au—Sn alloy containing 85 mass % or more of Au.
Public/Granted literature
- US20090050920A1 CERAMIC WIRING BOARD AND PROCESS FOR PRODUCING THE SAME, AND SEMICONDUCTOR DEVICE USING THE SAME Public/Granted day:2009-02-26
Information query
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