Invention Grant
US07795733B2 Semiconductor device having aerial wiring and manufacturing method thereof
失效
具有空中配线的半导体装置及其制造方法
- Patent Title: Semiconductor device having aerial wiring and manufacturing method thereof
- Patent Title (中): 具有空中配线的半导体装置及其制造方法
-
Application No.: US11399653Application Date: 2006-04-07
-
Publication No.: US07795733B2Publication Date: 2010-09-14
- Inventor: Kazumichi Tsumura , Hideki Shibata , Masaki Yamada
- Applicant: Kazumichi Tsumura , Hideki Shibata , Masaki Yamada
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2005-232387 20050810
- Main IPC: H01L29/40
- IPC: H01L29/40
Abstract:
A semiconductor device includes a first aerial wiring including a first wiring layer which is formed in an air gap and contains Cu as a main component and a via layer which is electrically connected to the first wiring layer, is formed in an inter-level insulating film containing a preset constituent element and contains Cu as a main component, and a first porous film formed on the first aerial wiring. The semiconductor device further includes a first barrier film which is formed to cover the surface of the first aerial wiring and contains a compound of the preset constituent element and a preset metal element as a main component.
Public/Granted literature
- US20070035032A1 Semiconductor device having aerial wiring and manufacturing method thereof Public/Granted day:2007-02-15
Information query
IPC分类:
