Invention Grant
- Patent Title: Surface acoustic wave element and communication device
- Patent Title (中): 表面声波元件和通讯装置
-
Application No.: US11577982Application Date: 2005-10-25
-
Publication No.: US07795788B2Publication Date: 2010-09-14
- Inventor: Yuuko Yokota , Shigehiko Nagamine , Kiyo Yamahara
- Applicant: Yuuko Yokota , Shigehiko Nagamine , Kiyo Yamahara
- Applicant Address: JP Kyoto
- Assignee: Kyocera Corporation
- Current Assignee: Kyocera Corporation
- Current Assignee Address: JP Kyoto
- Agency: Hogan Lovells US LLP
- Priority: JP2004-311244 20041026; JP2004-342835 20041126
- International Application: PCT/JP2005/019573 WO 20051025
- International Announcement: WO2006/046545 WO 20060504
- Main IPC: H01L41/047
- IPC: H01L41/047 ; H03H9/25

Abstract:
An IDT electrode (3) on a piezoelectric substrate (2) has an electrode including first metal layers (31a, 31b) formed of titanium or a titanium alloy, or chromium or a chromium alloy and second metal layers (32a, 32b) formed of aluminum or an aluminum alloy, copper or a copper alloy, or gold or a gold alloy, which are laminated alternately. The orientation degrees in the first metal layer (31a) that is closest to the surface of the piezoelectric substrate (2) in the first metal layers (31a, 31b) and the second metal layer (32a) that is closest to the surface of the piezoelectric substrate (2) in the second metal layers (32a, 32b) are higher than the orientation degrees in the upper metal layers. As compared with the prior art where the orientation degrees in the first metal layers (31a, 31b) and the second metal layers (32a, 32b) are not considered, the power handling capability of the IDT electrode (3) can be significantly improved.
Public/Granted literature
- US20090243430A1 Surface Acoustic Wave Element and Communication Device Public/Granted day:2009-10-01
Information query
IPC分类: