Invention Grant
US07795980B2 Power amplifiers having improved protection against avalanche current
有权
功率放大器具有改进的防雪崩电流保护
- Patent Title: Power amplifiers having improved protection against avalanche current
- Patent Title (中): 功率放大器具有改进的防雪崩电流保护
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Application No.: US12138959Application Date: 2008-06-13
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Publication No.: US07795980B2Publication Date: 2010-09-14
- Inventor: James R. Griffiths , David M. Gonzalez , Elie A. Maalouf
- Applicant: James R. Griffiths , David M. Gonzalez , Elie A. Maalouf
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agency: Ingrassia, Fisher & Lorenz, P.C.
- Main IPC: H03F1/52
- IPC: H03F1/52

Abstract:
A power amplifier for use in a radio frequency (RF) transmitter or other device exhibits improved protection from voltage standing wave ratio (VSWR) issues emanating from avalanche currents. The amplifier circuit includes a power transistor having a base terminal, and a mirror transistor having a collector terminal and a base terminal. The base terminal is coupled to the collector terminal of the mirror transistor to thereby provide a bias current to the base terminal of the mirror transistor. The base terminal is also coupled to the base terminal of the power transistor to thereby form a base bias feed node for a current mirror arrangement. A static or variable impedance is coupled to the base bias feed node to sink current and to thereby maintain the proper bias current at the base terminal of the mirror transistor to thereby continue operation of the mirror transistor while avalanche conditions exist.
Public/Granted literature
- US20090309663A1 POWER AMPLIFIERS HAVING IMPROVED PROTECTION AGAINST AVALANCHE CURRENT Public/Granted day:2009-12-17
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