Invention Grant
- Patent Title: Multilayered piezoelectric element and method of manufacturing the same
- Patent Title (中): 多层压电元件及其制造方法
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Application No.: US12351362Application Date: 2009-01-09
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Publication No.: US07797804B2Publication Date: 2010-09-21
- Inventor: Takashi Nakamura , Atsushi Osawa
- Applicant: Takashi Nakamura , Atsushi Osawa
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2006-029825 20060207
- Main IPC: H04R17/00
- IPC: H04R17/00

Abstract:
A multilayered piezoelectric element in which braking to displacement of piezoelectric material layers is suppressed and insulating films suitable for thinning of the piezoelectric material layers are formed. A method of manufacturing the element includes the steps of: (a) forming a multilayered structure including piezoelectric material layers, at least one first electrode layer, and at least one second electrode layer; (b) discharging a liquid synthetic resin from a nozzle provided in a dispenser to apply it to an end portion of the first electrode layer in a first region within side surfaces of the multilayered structure and curing the liquid synthetic resin to form a first insulating film; and (c) discharging the liquid synthetic resin from the nozzle to apply it to an end portion of the second electrode layer in a second region and curing the liquid synthetic resin to form a second insulating film.
Public/Granted literature
- US20090119896A1 MULTILAYERED PIEZOELECTRIC ELEMENT AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2009-05-14
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