Invention Grant
- Patent Title: Patterned atomic layer epitaxy
- Patent Title (中): 图案原子层外延
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Application No.: US11955845Application Date: 2007-12-13
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Publication No.: US07799132B2Publication Date: 2010-09-21
- Inventor: John N. Randall , Jingping Peng , Jun-Fu Liu , George D. Skidmore , Christof Baur , Richard E. Stallcup , Robert J. Folaron
- Applicant: John N. Randall , Jingping Peng , Jun-Fu Liu , George D. Skidmore , Christof Baur , Richard E. Stallcup , Robert J. Folaron
- Applicant Address: US TX Richardson
- Assignee: Zyvex Labs, LLC
- Current Assignee: Zyvex Labs, LLC
- Current Assignee Address: US TX Richardson
- Agency: Haynes and Boone LLP
- Main IPC: C30B25/04
- IPC: C30B25/04
Abstract:
A patterned layer is formed by removing nanoscale passivating particle from a first plurality of nanoscale structural particles or by adding nanoscale passivating particles to the first plurality of nanoscale structural particles. Each of a second plurality of nanoscale structural particles is deposited on each of corresponding ones of the first plurality of nanoscale structural particles that is not passivated by one of the plurality of nanoscale passivating particles.
Public/Granted literature
- US20080092803A1 PATTERNED ATOMIC LAYER EPITAXY Public/Granted day:2008-04-24
Information query
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