Invention Grant
- Patent Title: Ion concentration transistor and dual-mode sensors
- Patent Title (中): 离子浓度晶体管和双模传感器
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Application No.: US12476329Application Date: 2009-06-02
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Publication No.: US07799205B2Publication Date: 2010-09-21
- Inventor: Arkadiy Morgenshtein , Uri Dinnar , Yael Nemirovsky
- Applicant: Arkadiy Morgenshtein , Uri Dinnar , Yael Nemirovsky
- Applicant Address: IL Haifa
- Assignee: Technion Research & Development Foundation Ltd.
- Current Assignee: Technion Research & Development Foundation Ltd.
- Current Assignee Address: IL Haifa
- Main IPC: G01N27/414
- IPC: G01N27/414 ; G01N27/26

Abstract:
An ion concentration sensor produces a signal reflective of the ion concentration within a solution. The ion concentration sensor is based on an ion sensitive transistor having a solution input, a reference input, a diffusion input, and a diffusion output. The ion sensitive transistor is connected as a pass transistor, such that the diffusion output provides an electrical signal indicating an ion concentration in a solution contacting the solution input.
Public/Granted literature
- US20090294653A1 ION CONCENTRATION TRANSISTOR AND DUAL-MODE SENSORS Public/Granted day:2009-12-03
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