Invention Grant
US07799269B2 Method of sintering AIN under a methane-containing nitrogen atmosphere
失效
在含甲烷的氮气氛下烧结AIN的方法
- Patent Title: Method of sintering AIN under a methane-containing nitrogen atmosphere
- Patent Title (中): 在含甲烷的氮气氛下烧结AIN的方法
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Application No.: US11860559Application Date: 2007-09-25
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Publication No.: US07799269B2Publication Date: 2010-09-21
- Inventor: George C. Wei , Harry S. Mackel
- Applicant: George C. Wei , Harry S. Mackel
- Applicant Address: US MA Danvers
- Assignee: Osram Sylvania Inc.
- Current Assignee: Osram Sylvania Inc.
- Current Assignee Address: US MA Danvers
- Agent Robert F. Clark
- Main IPC: C04B35/581
- IPC: C04B35/581 ; C04B35/58 ; C04B35/64

Abstract:
The present method uses a methane-containing nitrogen gas sintering atmosphere to sinter aluminum nitride (AlN) to a high transmittance. The methane gas replaces the solid carbon charge material used in prior art sintering methods as the source of gaseous carbon. The amount of carbon in the methane-containing nitrogen gas is easily controlled by varying the partial pressure of methane in the nitrogen gas. In addition, the methane flow is stopped prior to the end of the sintering cycle to prevent darkening of the sintered part.
Public/Granted literature
- US20090079112A1 Method of Sintering AlN Under a Methane-containing Nitrogen Atmosphere Public/Granted day:2009-03-26
Information query
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