Invention Grant
US07799312B2 Method for manufacturing high-density indium tin oxide target, methods for preparing tin oxide powder and indium oxide powder used therefor 有权
高密度铟锡氧化物靶的制造方法,用于制造氧化锡粉末和氧化铟粉末的方法

Method for manufacturing high-density indium tin oxide target, methods for preparing tin oxide powder and indium oxide powder used therefor
Abstract:
A method for manufacturing an indium tin oxide (ITO) target and methods for preparing indium oxide powder (In2O3) and tin oxide powder (SnO2). The method for manufacturing an ITO (indium tin oxide) target includes preparing an In2O3 powder having a surface area of about 10-18 m2/g and an average particle diameter of between about 40 to 80 nm; preparing a SnO2 powder having a surface area of about 8-15 m2/g and an average particle diameter of about 60-100 nm; molding a mixture of the In2O3 powder and the SnO2 powder; and sintering the mixture at atmospheric pressure under oxidation atmosphere. The ITO target is applicable for a high-quality, transparent electrode for a display, such as a liquid crystal display, electroluminescent display, or field emission display.
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