Invention Grant
- Patent Title: Method for manufacturing high-density indium tin oxide target, methods for preparing tin oxide powder and indium oxide powder used therefor
- Patent Title (中): 高密度铟锡氧化物靶的制造方法,用于制造氧化锡粉末和氧化铟粉末的方法
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Application No.: US11806064Application Date: 2007-05-29
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Publication No.: US07799312B2Publication Date: 2010-09-21
- Inventor: Kyong-hwa Song , Sang-cheol Park , Jung-gyu Nam
- Applicant: Kyong-hwa Song , Sang-cheol Park , Jung-gyu Nam
- Applicant Address: KR Gumi
- Assignee: Samsung Corning Precision Glass Co., Ltd.
- Current Assignee: Samsung Corning Precision Glass Co., Ltd.
- Current Assignee Address: KR Gumi
- Agency: Lee & Morse, P.C.
- Priority: KR10-2002-0015609 20020322; KR10-2002-0015610 20020322
- Main IPC: C01G19/00
- IPC: C01G19/00

Abstract:
A method for manufacturing an indium tin oxide (ITO) target and methods for preparing indium oxide powder (In2O3) and tin oxide powder (SnO2). The method for manufacturing an ITO (indium tin oxide) target includes preparing an In2O3 powder having a surface area of about 10-18 m2/g and an average particle diameter of between about 40 to 80 nm; preparing a SnO2 powder having a surface area of about 8-15 m2/g and an average particle diameter of about 60-100 nm; molding a mixture of the In2O3 powder and the SnO2 powder; and sintering the mixture at atmospheric pressure under oxidation atmosphere. The ITO target is applicable for a high-quality, transparent electrode for a display, such as a liquid crystal display, electroluminescent display, or field emission display.
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