Invention Grant
- Patent Title: Dual metric OPC
- Patent Title (中): 双公制OPC
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Application No.: US11673511Application Date: 2007-02-09
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Publication No.: US07799487B2Publication Date: 2010-09-21
- Inventor: Ayman Yehia Hamouda
- Applicant: Ayman Yehia Hamouda
- Agency: Klarquist Sparkman, LLP
- Main IPC: G03F1/00
- IPC: G03F1/00 ; G06F17/50
Abstract:
A technique for creating mask layout data to print a desired pattern of features via a photolithographic process includes defining one or more subresolution assist features (SRAFs) and performing OPC on printing features and the added SRAF features.
Public/Granted literature
- US20080193859A1 DUAL METRIC OPC Public/Granted day:2008-08-14
Information query
