Invention Grant
US07799507B2 Positive resist composition for immersion lithography and method for forming resist pattern
有权
用于浸渍光刻的正型抗蚀剂组合物和形成抗蚀剂图案的方法
- Patent Title: Positive resist composition for immersion lithography and method for forming resist pattern
- Patent Title (中): 用于浸渍光刻的正型抗蚀剂组合物和形成抗蚀剂图案的方法
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Application No.: US12300760Application Date: 2007-04-23
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Publication No.: US07799507B2Publication Date: 2010-09-21
- Inventor: Kotaro Endo , Makiko Irie , Takeshi Iwai , Yoshiyuki Utsumi , Yasuhiro Yoshii , Tsuyoshi Nakamura
- Applicant: Kotaro Endo , Makiko Irie , Takeshi Iwai , Yoshiyuki Utsumi , Yasuhiro Yoshii , Tsuyoshi Nakamura
- Applicant Address: JP Kawasaki-shi
- Assignee: Tokyo Ohka Co., Ltd.
- Current Assignee: Tokyo Ohka Co., Ltd.
- Current Assignee Address: JP Kawasaki-shi
- Agency: Knobbe, Martens, Olson & Bear, LLP
- Priority: JP2006-138808 20060518; JP2006-248208 20060913
- International Application: PCT/JP2007/058759 WO 20070423
- International Announcement: WO2007/135836 WO 20071129
- Main IPC: G03F7/004
- IPC: G03F7/004 ; G03F7/30
Abstract:
A positive resist composition for immersion lithography of the present invention includes a resin component (A) which exhibits increased alkali solubility under the action of acid; and an acid generator component (B) which generates acid on exposure, wherein the resin component (A) includes a cyclic main chain resin (A1) containing a fluorine atom and no acid-dissociable group, and a resin (A2) containing a structural unit (a) derived from an acrylic acid and no fluorine atom.
Public/Granted literature
- US20090117490A1 POSITIVE RESIST COMPOSITION FOR IMMERSION LITHOGRAPHY AND METHOD FOR FORMING RESIST PATTERN Public/Granted day:2009-05-07
Information query
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