Invention Grant
US07799582B2 Mitigation of edge degradation in ferroelectric memory devices through plasma etch clean
有权
通过等离子体蚀刻清洁减轻铁电存储器件中的边缘退化
- Patent Title: Mitigation of edge degradation in ferroelectric memory devices through plasma etch clean
- Patent Title (中): 通过等离子体蚀刻清洁减轻铁电存储器件中的边缘退化
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Application No.: US12502523Application Date: 2009-07-14
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Publication No.: US07799582B2Publication Date: 2010-09-21
- Inventor: Kezhakkedath R. Udayakumar , Lindsey H. Hall , Francis G. Celii , Scott R. Summerfelt
- Applicant: Kezhakkedath R. Udayakumar , Lindsey H. Hall , Francis G. Celii , Scott R. Summerfelt
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A ferroelectric memory device is fabricated while mitigating edge degradation. A bottom electrode is formed over one or more semiconductor layers. A ferroelectric layer is formed over the bottom electrode. A top electrode is formed over the ferroelectric layer. The top electrode, the ferroelectric layer, and the bottom electrode are patterned or etched. A dry clean is performed that mitigates edge degradation. A wet etch/clean is then performed.
Public/Granted literature
- US20090275147A1 MITIGATION OF EDGE DEGRADATION IN FERROELECTRIC MEMORY DEVICES THROUGH PLASMA ETCH CLEAN Public/Granted day:2009-11-05
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