Invention Grant
- Patent Title: Semiconductor sensor having a front-side contact zone
- Patent Title (中): 具有前侧接触区域的半导体传感器
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Application No.: US10539799Application Date: 2003-12-06
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Publication No.: US07799606B2Publication Date: 2010-09-21
- Inventor: Torsten Pechstein , Robert Scholz
- Applicant: Torsten Pechstein , Robert Scholz
- Applicant Address: DE
- Assignee: Endress + Hauser Conducta Gesellschaft fur Mess- u. Regeltechnik mbH + Co. KG
- Current Assignee: Endress + Hauser Conducta Gesellschaft fur Mess- u. Regeltechnik mbH + Co. KG
- Current Assignee Address: DE
- Agency: Bacon & Thomas, PLLC
- Priority: DE10260961 20021220
- International Application: PCT/EP03/13839 WO 20031206
- International Announcement: WO2004/059311 WO 20040715
- Main IPC: H01L21/00
- IPC: H01L21/00 ; G01N27/26 ; G01N21/00

Abstract:
An ion-sensitive sensor arrangement includes: a semiconductor chip having a first surface, which has a media-sensitive region and at least one, first, electrical contact surface; and a support having a second surface, which faces the first surface of the semiconductor chip. An opening is provided, which aligns with the sensitive region, and at least one, second, electrical contact surface, which overlaps, or aligns with, the at least one, first, electrical contact surface. Between the support and the semiconductor chip, a preferably elastic, anisotropic conductor is arranged, which produces a conducting connection between the at least one, first, contact surface and the at least one, second, contact surface, and which has a traversing opening, which aligns with the opening, so that the sensitive region of the semiconductor chip can be contacted through the opening by an analyte. The preferably elastic, anisotropic conductor seals the region outside of the opening against contamination with the analyte.
Public/Granted literature
- US20060159590A1 Semiconductor sensor having a front-side contact zone Public/Granted day:2006-07-20
Information query
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