Invention Grant
US07799640B2 Method of forming a semiconductor device having trench charge compensation regions
有权
形成具有沟槽电荷补偿区域的半导体器件的方法
- Patent Title: Method of forming a semiconductor device having trench charge compensation regions
- Patent Title (中): 形成具有沟槽电荷补偿区域的半导体器件的方法
-
Application No.: US11536249Application Date: 2006-09-28
-
Publication No.: US07799640B2Publication Date: 2010-09-21
- Inventor: John M. Parsey, Jr. , Gordon M. Grivna , Shanghui L. Tu
- Applicant: John M. Parsey, Jr. , Gordon M. Grivna , Shanghui L. Tu
- Applicant Address: US AZ Phoenix
- Assignee: Semiconductor Components Industries, LLC
- Current Assignee: Semiconductor Components Industries, LLC
- Current Assignee Address: US AZ Phoenix
- Agent Kevin B. Jackson
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
In one embodiment, a method of forming a semiconductor device with trench charge compensation structures includes exposing the trench sidewalls to a reduced temperature hydrogen desorption process to enhance the formation of monocrystalline semiconductor layers.
Public/Granted literature
- US20080081440A1 METHOD OF FORMING A SEMICONDUCTOR DEVICE HAVING TRENCH CHARGE COMPENSATION REGIONS Public/Granted day:2008-04-03
Information query
IPC分类:
