Transistor with asymmetry for data storage circuitry

Invention Grant

US07799644B2 Transistor with asymmetry for data storage circuitry 有权

Title translation: 具有数据存储电路不对称的晶体管

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Patent Title: Transistor with asymmetry for data storage circuitry
Patent Title (中): 具有数据存储电路不对称的晶体管
Application No.: US11460782

Application Date: 2006-07-28
Publication No.: US07799644B2

Publication Date: 2010-09-21
Inventor: Ted R. White , James D. Burnett , Brian A. Winstead
Applicant: Ted R. White , James D. Burnett , Brian A. Winstead
Applicant Address: US TX Austin
Assignee: Freescale Semiconductor, Inc.
Current Assignee: Freescale Semiconductor, Inc.
Current Assignee Address: US TX Austin
Agent Kim-Marie Vo
Main IPC: H01L21/8234
IPC: H01L21/8234 ; H01L21/44

Transistor with asymmetry for data storage circuitry

Abstract:

A transistor having a source with higher resistance than its drain is optimal as a pull-up device in a storage circuit. The transistor has a source region having a source implant having a source resistance. The source region is not salicided. A control electrode region is adjacent the source region for controlling electrical conduction of the transistor. A drain region is adjacent the control electrode region and opposite the source region. The drain region has a drain implant that is salicided and has a drain resistance. The source resistance is more than the drain resistance because the source region having a physical property that differs from the drain region.

Abstract(Chinese):

具有比漏极更高电阻的源极的晶体管作为存储电路中的上拉器件是最佳的。晶体管具有源极区域，源极源极具有源极电阻。来源地区没有水淹。控制电极区域与源极区域相邻，用于控制晶体管的导电。漏极区域与控制电极区域相邻并与源极区域相对。漏极区域具有被浸没并具有漏极电阻的漏极注入。源极电阻大于漏极电阻，因为源极区域具有不同于漏极区域的物理性质。

Public/Granted literature

US20080026529A1 TRANSISTOR WITH ASYMMETRY FOR DATA STORAGE CIRCUITRY Public/Granted day:2008-01-31

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺