Invention Grant
- Patent Title: Reduced refractive index and extinction coefficient layer for enhanced photosensitivity
- Patent Title (中): 降低折射率和消光系数层，提高光敏性
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Application No.: US11291880Application Date: 2005-12-01
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Publication No.: US07799654B2Publication Date: 2010-09-21
- Inventor: Yuan-Chih Hsieh , Chung-Yi Yu , Tsung-Hsun Huang , Tzu-Hsuan Hsu , Chia-Shiung Tsai
- Applicant: Yuan-Chih Hsieh , Chung-Yi Yu , Tsung-Hsun Huang , Tzu-Hsuan Hsu , Chia-Shiung Tsai
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L31/062 ; H01L31/111 ; H01L27/148 ; H01L29/768
Abstract:
An image sensor device includes a semiconductor substrate and a plurality of pixels on the substrate. An etch-stop layer is formed over the pixels and has a thickness less than about 600 Angstroms. The image sensor device further includes an interlayer dielectric (ILD) overlying the etch stop layer. The etch-stop layer has a refractive index less than about 2 and an extinction coefficient less than about 0.1.
Public/Granted literature
- US20070048965A1 Reduced refractive index and extinction coefficient layer for enhanced photosensitivity Public/Granted day:2007-03-01
Information query
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