Invention Grant
- Patent Title: Ruthenium alloy film for copper interconnects
- Patent Title (中): 用于铜互连的钌合金膜
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Application No.: US12129345Application Date: 2008-05-29
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Publication No.: US07799674B2Publication Date: 2010-09-21
- Inventor: Hiroshi Shinriki , Hiroaki Inoue
- Applicant: Hiroshi Shinriki , Hiroaki Inoue
- Applicant Address: JP Tokyo
- Assignee: ASM Japan K.K.
- Current Assignee: ASM Japan K.K.
- Current Assignee Address: JP Tokyo
- Agency: Knobbe, Martens, Olson & Bear LLP
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L21/44 ; H01L21/302 ; H01L21/461 ; H01L29/40 ; H01L23/52 ; H01L23/48
Abstract:
A method for forming interconnect wiring, includes: (i) covering a surface of a connection hole penetrating through interconnect dielectric layers formed on a substrate for interconnect wiring, with an underlying alloy layer selected from the group consisting of an alloy film containing ruthenium (Ru) and at least one other metal atom (M), a nitride film thereof, a carbide film thereof, and an nitride-carbide film thereof, and (ii) filling copper or a copper compound in the connection hole covered with the underlying layer.
Public/Granted literature
- US20090209101A1 RUTHENIUM ALLOY FILM FOR COPPER INTERCONNECTS Public/Granted day:2009-08-20
Information query
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