Invention Grant
US07799682B2 Transistor having a locally provided metal silicide region in contact areas and a method of forming the transistor
有权
在接触区域具有局部提供的金属硅化物区域的晶体管和形成晶体管的方法
- Patent Title: Transistor having a locally provided metal silicide region in contact areas and a method of forming the transistor
- Patent Title (中): 在接触区域具有局部提供的金属硅化物区域的晶体管和形成晶体管的方法
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Application No.: US11697890Application Date: 2007-04-09
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Publication No.: US07799682B2Publication Date: 2010-09-21
- Inventor: Sven Beyer , Patrick Press , Thomas Feudel
- Applicant: Sven Beyer , Patrick Press , Thomas Feudel
- Applicant Address: KY Grand Cayman
- Assignee: GlobalFoundries Inc.
- Current Assignee: GlobalFoundries Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Williams, Morgan & Amerson, P.C.
- Priority: DE102006040764 20060831
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
By performing a silicidation process on the basis of a patterned dielectric layer, such as an interlayer dielectric material, the respective metal silicide portions may be provided in a highly localized manner at the respective contact regions, while the overall amount of metal silicide may be significantly reduced. In this way, a negative influence of the stress of metal silicide on the channel regions of field effect transistors may be significantly reduced, while nevertheless maintaining a low contact resistance.
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