Invention Grant
US07799685B2 System and method for removal of photoresist in transistor fabrication for integrated circuit manufacturing
有权
用于集成电路制造的晶体管制造中去除光致抗蚀剂的系统和方法
- Patent Title: System and method for removal of photoresist in transistor fabrication for integrated circuit manufacturing
- Patent Title (中): 用于集成电路制造的晶体管制造中去除光致抗蚀剂的系统和方法
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Application No.: US10958866Application Date: 2004-10-04
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Publication No.: US07799685B2Publication Date: 2010-09-21
- Inventor: Stephen E. Savas , Songlin Xu , David Dutton , Andreas Kadavanich , Rene George
- Applicant: Stephen E. Savas , Songlin Xu , David Dutton , Andreas Kadavanich , Rene George
- Applicant Address: US CA Fremont
- Assignee: Mattson Technology, Inc.
- Current Assignee: Mattson Technology, Inc.
- Current Assignee Address: US CA Fremont
- Agency: Pritzkau Patent Group, LLC.
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461

Abstract:
In a technique for fabricating an integrated circuit to include an active device structure which supports an electrical interconnect structure, a photoresist layer is used prior to forming an electrical interconnect structure on the active device structure. The photoresist and related residues are removed by exposing the photoresist and exposed regions of the active device structure to one or more reactive species that are generated using a gas mixture including hydrogen gas, as a predominant source of the reactive species, in a plasma source such that the photoresist and residues are continuously exposed to hydrogen-based reactive species. An associated system architecture is described which provides for a substantial flow of hydrogen gas in the process chamber.
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