Method for fabricating semiconductor integrated circuit device

Invention Grant

US07799690B2 Method for fabricating semiconductor integrated circuit device 有权

Title translation: 制造半导体集成电路器件的方法

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Patent Title: Method for fabricating semiconductor integrated circuit device
Patent Title (中): 制造半导体集成电路器件的方法
Application No.: US11808805

Application Date: 2007-06-13
Publication No.: US07799690B2

Publication Date: 2010-09-21
Inventor: Yoshikazu Tanabe , Satoshi Sakai , Nobuyoshi Natsuaki
Applicant: Yoshikazu Tanabe , Satoshi Sakai , Nobuyoshi Natsuaki
Applicant Address: JP Kanagawa
Assignee: Renesas Electronics Corporation
Current Assignee: Renesas Electronics Corporation
Current Assignee Address: JP Kanagawa
Agency: Antonelli, Terry, Stout & Kraus, LLP.
Priority: JP9-50781 19970305
Main IPC: H01L21/311
IPC: H01L21/311

Method for fabricating semiconductor integrated circuit device

Abstract:

A method for fabricating a semiconductor integrated circuit device of the invention comprises feeding oxidation species containing a low concentration of water, which is generated from hydrogen and oxygen by the catalytic action, to the main surface of or in the vicinity of a semiconductor wafer, and forming a thin oxide film serving as a gate insulating film of an MOS transistor and having a thickness of 5 nm or below on the main surface of the semiconductor wafer at an oxide film-growing rate sufficient to ensure fidelity in formation of oxide film and uniformity in thickness of the oxide film.

Abstract(Chinese):

制造本发明的半导体集成电路器件的方法包括将由氢和氧产生的低浓度水的氧化物质通过催化作用输送到半导体晶片的主表面或其附近，以及在半导体晶片的主表面上以氧化膜生长速率形成用作MOS晶体管的栅极绝缘膜的厚度为5nm以下的薄氧化膜，其足以确保形成氧化膜的保真度和均匀性的氧化膜厚度。

Public/Granted literature

US20080045027A1 Method for fabricating semiconductor intergrated circuit device Public/Granted day:2008-02-21

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3105	......后处理
H01L21/311	.......绝缘层的刻蚀