Invention Grant
US07799707B2 Method of forming gated, self-aligned micro-structures and nano structures
有权
形成门控,自对准微结构和纳米结构的方法
- Patent Title: Method of forming gated, self-aligned micro-structures and nano structures
- Patent Title (中): 形成门控,自对准微结构和纳米结构的方法
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Application No.: US12184739Application Date: 2008-08-01
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Publication No.: US07799707B2Publication Date: 2010-09-21
- Inventor: Ronald J. Baird , Daniel G. Georgiev , Ivan Avrutsky , Golam Newaz , Gregory W. Auner
- Applicant: Ronald J. Baird , Daniel G. Georgiev , Ivan Avrutsky , Golam Newaz , Gregory W. Auner
- Applicant Address: US MI Detroit
- Assignee: Wayne State University
- Current Assignee: Wayne State University
- Current Assignee Address: US MI Detroit
- Agency: Brinks Hofer Gilson & Lione
- Main IPC: H01L21/324
- IPC: H01L21/324 ; H01L21/42 ; H01L21/00 ; H01L21/268

Abstract:
Methods of forming a gated, self-aligned nano-structures for electron extraction are disclosed. One method of forming the nano-structure comprises irradiating a first surface of a thermally conductive laminate to melt an area across the first surface of the laminate. The laminate comprises a thermally conductive film and a patterned layer disposed on the first surface of the film. The patterned layer has a pattern formed therethrough, defining the area for melting. The film is insulated at a second surface thereof to provide two-dimensional heat transfer laterally in plane of the film. The liquid density of the film is greater than the solid density thereof. The method further comprises cooling the area inwardly from the periphery thereof to form the nano-structure having an apical nano-tip for electron emission centered in an electrically isolated aperture that serves as a gate electrode to control electron extraction in a gated field emitter device.
Public/Granted literature
- US20090142936A1 METHOD OF FORMING GATED, SELF-ALIGNED MICRO-STRUCTURES AND NANO-STRUCTURES Public/Granted day:2009-06-04
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