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US07800084B2 System and method for charged-particle beam lithography 有权
带电粒子束光刻的系统和方法

System and method for charged-particle beam lithography
Abstract:
A charged-particle beam lithography system is provided. A region to be patterned is divided into plural frames, a main deflection positions a beam to a subfield within the frame, and an auxiliary deflection draws a pattern in units of subfield. The deflection control portion draws a pattern in units of stripe including a first frame drawing region and a second frame drawing region. The first frame drawing region corresponds to one of the frames, and the second frame drawing region is a region moved by a distance C from the first frame drawing region toward a frame to be drawn next. The deflection control portion controls the driver to alternately pattern a first sub-field drawing region in the first frame drawing region and a second sub-field drawing region in the second frame drawing region. The distance C satisfies 0
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