Invention Grant
- Patent Title: System and method for charged-particle beam lithography
- Patent Title (中): 带电粒子束光刻的系统和方法
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Application No.: US11933797Application Date: 2007-11-01
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Publication No.: US07800084B2Publication Date: 2010-09-21
- Inventor: Shuichi Tamamushi
- Applicant: Shuichi Tamamushi
- Applicant Address: JP Numazu-shi
- Assignee: NuFlare Technology, Inc.
- Current Assignee: NuFlare Technology, Inc.
- Current Assignee Address: JP Numazu-shi
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2006-298357 20061102
- Main IPC: G21K5/00
- IPC: G21K5/00

Abstract:
A charged-particle beam lithography system is provided. A region to be patterned is divided into plural frames, a main deflection positions a beam to a subfield within the frame, and an auxiliary deflection draws a pattern in units of subfield. The deflection control portion draws a pattern in units of stripe including a first frame drawing region and a second frame drawing region. The first frame drawing region corresponds to one of the frames, and the second frame drawing region is a region moved by a distance C from the first frame drawing region toward a frame to be drawn next. The deflection control portion controls the driver to alternately pattern a first sub-field drawing region in the first frame drawing region and a second sub-field drawing region in the second frame drawing region. The distance C satisfies 0
Public/Granted literature
- US20080105827A1 SYSTEM AND METHOD FOR CHARGED-PARTICLE BEAM LITHOGRAPHY Public/Granted day:2008-05-08
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