Invention Grant
US07800092B2 Phase change memory elements using energy conversion layers, memory arrays and systems including same, and methods of making and using
有权
使用能量转换层的相变存储器元件，包括其的存储器阵列和系统以及制造和使用的方法
- Patent Title: Phase change memory elements using energy conversion layers, memory arrays and systems including same, and methods of making and using
- Patent Title (中): 使用能量转换层的相变存储器元件，包括其的存储器阵列和系统以及制造和使用的方法
-
Application No.: US11504002Application Date: 2006-08-15
-
Publication No.: US07800092B2Publication Date: 2010-09-21
- Inventor: Jun Liu , Mike Violette , Jon Daley
- Applicant: Jun Liu , Mike Violette , Jon Daley
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dickstein Shapiro LLP
- Main IPC: H01L47/00
- IPC: H01L47/00
Abstract:
A phase change memory element and method of forming the same. The memory element includes a phase change material layer electrically coupled to first and second conductive material layers. A energy conversion layer is formed in association with the phase change material layer, and electrically coupled to a third conductive material layer. An electrically isolating material layer is formed between the phase change material layer and the energy conversion layer.
Public/Granted literature
Information query
IPC分类:
