Invention Grant
- Patent Title: Resistive memory including buried word lines
- Patent Title (中): 电阻记忆包括埋字线
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Application No.: US11701198Application Date: 2007-02-01
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Publication No.: US07800093B2Publication Date: 2010-09-21
- Inventor: Thomas Happ , Jan Boris Philipp
- Applicant: Thomas Happ , Jan Boris Philipp
- Applicant Address: US NC Durham
- Assignee: Qimonda North America Corp.
- Current Assignee: Qimonda North America Corp.
- Current Assignee Address: US NC Durham
- Agency: Coats & Bennett, P.L.L.C.
- Main IPC: H01L47/00
- IPC: H01L47/00
Abstract:
An integrated circuit including a memory cell includes a vertical bipolar select device including a base and an emitter. The memory cell includes a resistive memory element coupled to the emitter and a buried metallized word line contacting the base.
Public/Granted literature
- US20080185571A1 Resistive memory including buried word lines Public/Granted day:2008-08-07
Information query
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